| 赵峰,刘博妍,朱戈.关于NAND闪存损耗均衡算法的优化[J].南华大学学报(自然科学版),2017,31(3):86~91.[ZHAO Feng,LIU Bo-yan,ZHU Ge.Optimization of NAND Flash Memory Loss Equalization Algorithm[J].Journal of University of South China(Science and Technology),2017,31(3):86~91.] |
| 关于NAND闪存损耗均衡算法的优化 |
| Optimization of NAND Flash Memory Loss Equalization Algorithm |
| 投稿时间：2017-09-16 |
| DOI： |
| 中文关键词: NAND闪存 损耗均衡 算法优化 |
| 英文关键词:NAND flash memory loss equalization algorithm optimization |
| 基金项目:安徽省重点研究与开发计划面上科技攻关项目(1704a0902033) |
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| 中文摘要: |
| 为了改善NAND闪存不耐擦写的特性,本文对传统的损耗均衡算法(HWL算法)进行优化,主要包括触发机制的优化和将现有的静态损耗均衡与动态损耗均衡策略相结合的优化策略.最后根据需求设计了评估损耗均衡算法效果的测试实验.结果表明:与当前算法相比,本优化算法展现了良好的磨损均衡效果,解决了NAND闪存不耐擦写的缺陷. |
| 英文摘要: |
| To improve the characteristics of no resistance to erase NAND flash memory.In this paper,the traditional loss equalization algorithm (HWL algorithm) is optimized.It mainly includes the optimization of the triggering mechanism and the combination of the existing static loss balancing strategy and the dynamic loss balancing strategy.At last,a test experiment is designed to evaluate the effect of the loss equalization algorithm.The results show that compared with the current algorithm,a good wear and balance effect is achieved,which solves the defect of being not resistant to erase NAND flash memory. |
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