| 胡苹,尹岚,陈铀,李树玮.CuO薄膜的阻变存储特性[J].南华大学学报(自然科学版),2014,28(3):76~81.[HU Ping,YIN Lan,CHEN You,LI Shu-wei.Resistive Switching Characteristics of Copper Oxide Thin Films[J].Journal of University of South China(Science and Technology),2014,28(3):76~81.] |
| CuO薄膜的阻变存储特性 |
| Resistive Switching Characteristics of Copper Oxide Thin Films |
| 投稿时间：2014-03-30 |
| DOI： |
| 中文关键词: 分子束外延 双极阻变开关 非易失性 |
| 英文关键词:molecular beam epitaxy bipolar resistive switching nonvolatile |
| 基金项目:国家自然科学基金资助项目(11347203);湖南省教育厅基金资助项目(11C1073) |
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| 中文摘要: |
| 利用等离子体辅助的分子束外延设备在SrTiO3掺Nb(Nb:STO)的衬底上制备了双层的Cu2O/CuO薄膜,经过测量其电流电压特性,发现Pt/Cu2O/CuO/Nb:STO器件的阻变存储特性非常显著,而且可重复程度高,适合多次数据写入与擦除,有望应用于信息存储领域. |
| 英文摘要: |
| In this letter,bilayered Cu2O/CuO thin films were grown on Nb doped SrTiO3 (Nb:STO) substrates by plasma assisted molecular beam epitaxy.The current-voltage characteristics of Pt/Cu2O/CuO/Nb:STO devices show reproducible and pronounced current-voltage hysteresis which was induced by the CuO/Nb:STO junctions.The device can be used as information storage for its reproducibility and nonvolatility. |
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